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2SC4557
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4557 900 550 7 10(Pulse20) 5 80(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Switching Regulator and General Purpose
(Ta=25C) 2SC4557 100max 100max 550min 10 to 28 0.5max 1.2max 6typ 105typ V V
16.2
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=5A IC=5A, IB=1A IC=5A, IB=1A VCE=12V, IE=-1A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
Unit
A
23.00.3
V
9.50.2
A
a b
MHz pF
1.75 2.15 1.05 +0.2 -0.1 5.450.1 1.5 4.4 5.450.1 1.5 0.65 +0.2 -0.1
3.3
0.8
sTypical Switching Characteristics (Common Emitter)
VCC (V) 250 RL () 50 IC (A) 5 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.75 IB2 (A) -1.5 ton (s) 1max tstg (s) 5max tf (s) 0.5max
3.35
B
C
E
Weight : Approx 2.0g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
10
1.2 A
VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t)( V ) Base-Emitter Saturation Voltage V B E (s at)( V ) (I C/ I B= 5) 2
I C - V BE Temperature Characteristics (Typical)
10 (VCE=4V)
1A
80 0m A
8 Collector Current I C (A)
6
400m A
Collector Current I C (A)
600 mA
8
6
p)
Temp
1
-55C (Case Temp) Temp) 25C (Case p) ase Tem 125C (C
VBE(sat)
)
4
4
eT
200mA
(Case
Cas
125
2
2
ase 125C (C
Te m
p)
VCE(sat) 0 0.02 0.05 0.1
0
0
1
2
3
4
0.5
1
-5 5
5C
10
0
0
0.2
0.4
0.6
0.8
-55C
25C
25C
I B= 100mA
C (
(Case
Temp)
em
1.0
Collector-Emitter Voltage V C E( V)
Collector Current I C (A)
Base-Emittor Voltage V B E( V)
(VCE=4V) 50 10
j-a(C/W)
hFE - IC Temperature Characteristics (Typical)
ton*t s t g*t f( s)
125 C
t on *t stg * tf - I C Characteristics (Typical)
tstg VCC 250V IC:I B1: -I B 2= 10:1.5:3
j-a - t Characteristics
2
DC C urrent G ain h FE
Transient Thermal Resistance
25 C
5
1
-5 5 C
Sw it ching Time
1 0.5 t on tf 0.1 0.2 0.5 1 Collector Current I C( A) 5 10
0.5
10
5 0.02
0.05
0.1
0.5
1
5
10
0.1
1
10 Time t(ms)
100
3.0
1.2
1000
Collector Current I C( A)
Safe Operating Area (Single Pulse)
20 10 5 Collect or Cur re nt I C( A)
10
Reverse Bias Safe Operating Area
20 10 80
P c - T a Derating
0
s
Ma xim um Powe r Dissipat io n P C( W)
Collector Cur rent I C( A)
5
60
W ith In fin ite he
40
at si
1
1 Without Heatsink Natural Cooling L=3mH IB2=-1.0A Duty:less than 1%
nk
0.5
Without Heatsink Natural Cooling
0.5
20
Without Heatsink 0.1 10 50 100 500 1000 0.1 10 50 100 500 1000 3.5 0 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
115

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